| PART |
Description |
Maker |
| KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| BZG049V1TR BZG0430 BZG0430TR |
300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214 PLASTIC, DO-214, 2 PIN
|
Vishay Beyschlag
VISHAY TELEFUNKEN
|
| K5D5657ACM-F015 |
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronics
|
| W3EG264M72AFSR335D3XG |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL, FBGA 1GB 2x64Mx72 ECC的DDR SDRAM的注册瓦锁相环，FBGA封装
|
KEMET Corporation
|
| HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.
DDR2 SDRAM - SO DIMM 256MB
DDR2 SDRAM - SO DIMM 512MB
DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
| WV3EG128M72EFSR335D3SG |
1GB - 128Mx72 DDR SDRAM REGISTERED w/PLL, FBGA 1GB 128Mx72 DDR SDRAM的注册瓦锁相环，FBGA封装
|
Electronic Theatre Controls, Inc.
|
| HY5PS1G831CFP-Y5 HY5PS1G831CLFP-Y5 HY5PS1G1631CFP- |
1Gb DDR2 SDRAM 1G DDR2内存
1Gb DDR2 SDRAM 64M X 16 DDR DRAM, 0.5 ns, PBGA84
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| TS1GJF150 |
1GB USB2.0 JetFlash垄芒
1GB USB2.0 JetFlash?
|
Transcend Information. Inc.
Transcend Information. ...
|
| BYS10 BYS10-25 BYS10-35 |
Schottky Barrier Rectifier(低反向电流肖特基势垒整流
1.5 A, 25 V, SILICON, RECTIFIER DIODE, DO-214 SIMILAR TO SMA, 2 PIN
1.5 A, 35 V, SILICON, RECTIFIER DIODE, DO-214 SIMILAR TO SMA, 2 PIN
|
Vishay Intertechnology,Inc.
Vishay Beyschlag
|
| HYS64D3202 HYS64D16000GDL-6-C HYS64D32020HDL-6-C H |
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank; Available 2Q04
DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank; Available 2Q04
DDR SDRAM Modules - 256MB (32Mx64) PC2700 2-bank; Available 2Q04
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| ESMMC128 ESMMC512 ESMMC256 ESMMC64 |
64MB/128MB/256MB/512MB MultiMediaCard⑩
64MB/128MB/256MB/512MB MultiMediaCard?/a>
64MB/128MB/256MB/512MB MultiMediaCard垄芒
|
Eorex Corporation
|
| 1205-69-5 |
FOR USE WITH RG-9, 9A, 9B, 214, 225 & 393/U CABLE
|
Winchester Electronics ...
|
